2000. 5. 13
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SEMICONDUCTOR
TECHNICAL DATA
KTA1276
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
FEATURES
Good Linearity of h
FE
.
Complementary to KTC3230.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
10.30 MAX
15.30 MAX
0.80
3.60 0.20
3.00
6.70 MAX
13.60 0.50
5.60 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
A
E
M
M
1
2
3
F
B
G
H
L
C
K
J
O
N
P
D
1.37 MAX
1.50 MAX
R
S
Q
C
T
Q
1.50
R
9.50 0.20
S
8.00 0.20
T
2.90 MAX
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification O:70~140, Y:120~240
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-3
A
Emitter Current
I
E
3
A
Collector Power Dissipation (Tc=25 )
P
C
10
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-20V, I
E
=0
-
-
-1.0
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-1.0
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-30
-
-
V
Emitter Base Breakdown Voltage
V
(BR)EBO
I
E
=-1mA, I
C
=0
-5
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=-2V, I
C
=-0.5A
70
-
240
h
FE
(2)
V
CE
=-2V, I
C
=-2.5A
25
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-2A, I
B
=-0.2A
-
-0.3
-0.8
V
Base-Emitter Voltage
V
BE
V
CE
=-2V, I
C
=-0.5A
-
-0.75
-1.0
V
Transition Frequency
f
T
V
CE
=-2V, I
C
=-0.5A
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
40
-
pF
2000. 5. 13
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KTA1276
Revision No : 1
AMBIENT TEMPERATURE Ta ( C)
TOTAL POWER DISSIPATION P (W)
0
50
T
2
10
100
150
4
6
8
INFI
NIT
E HE
AT
SIN
K
WITHOUT HEAT SINK
COLLECTOR CURRENT I (A)
C
-0.1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
-1
-100
-0.1
-1
-3
-10
10
S
1mS
10mS
DC OPER
ATION
Tc=25 C
*SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
I MAX.(PLUSED)
C
I MAX.
C
(CONTINUOUS)
CE
V =-2.0V
100
60
-0.01
h - I
C
COLLECTOR CURRENT I (A)
-0.001
-0.1
-1
-10
30
1
DC CURRENT GAIN h
FE
300
1K
FE
C
BASE SATURATION VOLTAGE V (V)
COLLECTOR CURRENT I (A)
-0.001
-0.01
-0.1
C
-10
-1
BE(sat)
-0.003
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR SATURATION VOLTAGE V (V)
CE(sat)
V
CE(sat)
BE(sat)
V
I /I =10
C B
COLLECTOR CURRENT I (A)
GAIN BANDWIDTH PRODUCT f (MHz)
1
-0.01
3
10
300
100
30
1K
-0.03
-0.1
C
-0.3
-1
T
V =-5.0V
CE
COLLECTOR BASE VOLTAGE V (V)
f =1.0MHz
T
OUTPUT CAPACITANCE C (pF)
-1
1
10
3
30
100
300
ob
-10
-3
CB
-30
-60
-6
6
60
COLLECTOR CURRENT I (A)
-1.2
-0.4
-0.8
-20
I =-1mA
COLLECTOR EMITTER VOLATGE V (V)
-8
0
-4
-4
-12
-5
-6
-16
CE
-3
B
-2
-1.6
-2.0
C
-7
-8
-9
-10
f - I
T
C
P - T
C
a
I - V
C
CE
V - I , V - I
CE(sat)
C
BE(sat)
C
C - V
ob
CB
3
6
10
-0.001
-0.01
1K
600
-100
-10
-0.01
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